to-92 plastic-encapsulate transistors KTA1266 transistor (pnp) features z excellent h fe linearity z low n oise z complementary to ktc3198 maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value units v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.15 a p c collector power dissipation 625 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c =-100 a, i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-50v, i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 -0.1 a h fe(1) v ce =-6v, i c =-2ma 70 400 dc current gain h fe(2) v ce =-6v, i c =-150ma 25 collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma -0.3 v base-emitter saturation voltage v be(sat) i c =-100ma, i b =-10ma -1.1 v transition frequency f t v ce =-10v, i c =-1ma 80 mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz 7 pf noise figure nf v ce =-6v, i c =-0.1ma, f=1khz, rg=10k ? 10 db classification of h fe(1) rank o y gr range 70-140 120-240 200-400 marking to-92 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
|
